Search results for "vacuum deposition"

showing 10 items of 32 documents

Solid-state mechanochemical synthesis of multinary metal halide semiconductors for optoelectronics: From powder to thin film

2020

En la última década, las perovskitas de haluro de plomo, así como otros haluros de metales múltiples, incluidas las alternativas sin plomo, han demostrado ser materiales prometedores para su uso en optoelectrónica. Por lo tanto, se buscan activamente nuevas formas de producir semiconductores de alta pureza a gran escala. Por tanto, el objetivo principal de esta tesis doctoral es el desarrollo de perovskitas y semiconductores relacionados utilizando métodos sin disolventes. Además, con la perspectiva del uso de dichos materiales en optoelectrónica a escala industrial, el foco está puesto en trabajar con materiales benignos para el desarrollo de alternativas a las perovskitas tóxicas. La sínt…

:CIENCIAS TECNOLÓGICAS [UNESCO]multinary metal halide semiconductorsoptoelectronicsthin filmUNESCO::QUÍMICAperovskitessolvent freemechanochemistryUNESCO::CIENCIAS TECNOLÓGICAS:QUÍMICA [UNESCO]single source vacuum deposition
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Fabrication and characterization of vacuum deposited fluorescein thin films

2011

Simple vacuum evaporation technique for deposition of dyes on various solid surfaces has been developed. The method is compatible with conventional solvent-free nanofabrication processing enabling fabrication of nanoscale optoelectronic devices. Thin films of fluorescein were deposited on glass, fluorine-tin-oxide (FTO) coated glass with and without atomically layer deposited (ALD) nanocrystalline 20 nm thick anatase TiO2 coating. Surface topology, absorption and emission spectra of the films depends on their thickness and the material of supporting substrate. On a smooth glass surface the dye initially formes islands before merging into a uniform layer after 5 to 10 monolayers. On FTO cove…

Absorption spectroscopyta221Analytical chemistryFOS: Physical sciencesSubstrate (electronics)Vacuum evaporationVacuum depositionMesoscale and Nanoscale Physics (cond-mat.mes-hall)Materials ChemistryThin filmta216ta116Surface statesCondensed Matter - Materials ScienceCondensed Matter - Mesoscale and Nanoscale Physicsta114business.industryChemistryMetals and AlloysMaterials Science (cond-mat.mtrl-sci)Surfaces and InterfacesNanocrystalline materialSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsOptoelectronicsbusinessLayer (electronics)Thin Solid Films
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MoO (x≤2) ultrathin film growth from reactions between metallic molybdenum and TiO2 surfaces

2001

Abstract Exposures to oxygen at room temperature and annealings under vacuum were carried out on deposits obtained from molybdenum interacting with (1 1 0) TiO 2 surfaces in order to obtain molybdenum oxide ultra thin films. Exposures to oxygen at room temperature show that the interfacial molybdenum oxide layers resulting from the TiO 2 /Mo interactions are inactive towards oxygen whereas the metallic molybdenum clusters, which grew on top of the interfacial layers, oxidise into MoO 3 . Besides, during annealings under vacuum, substrate oxygen anions can diffuse into the deposit. Thus, between 400 and 500°C, molybdenum oxide layers are progressively oxidised into MoO 2 . Moreover, from the…

ChemistryAnnealing (metallurgy)Inorganic chemistryGeneral Physics and Astronomychemistry.chemical_elementSurfaces and InterfacesGeneral ChemistryCondensed Matter PhysicsSurfaces Coatings and FilmsMetalVacuum depositionX-ray photoelectron spectroscopyMolybdenumPhysical vapor depositionvisual_artvisual_art.visual_art_mediumThin filmStoichiometryApplied Surface Science
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Efficient Vacuum Deposited P-I-N Perovskite Solar Cells by Front Contact Optimization.

2020

Hole transport layers HTLs are of fundamental importance in perovskite solar cells PSCs , as they must ensure an efficient and selective hole extraction, and ohmic charge transfer to the corresponding electrodes. In p i n solar cells, the ITO HTL is usually not ohmic, and an additional interlayer such as MoO3 is usually placed in between the two materials by vacuum sublimation. In this work, we evaluated the properties of the MoO3 TaTm TaTm is the HTL N4,N4,N4 amp; 8243;,N4 amp; 8243; tetra [1,1 amp; 8242; biphenyl] 4 yl [1,1 amp; 8242; 4 amp; 8242;,1 amp; 8243; terphenyl] 4,4 amp; 8243; diamine hole extraction interface by selectively annealing either MoO3 prior to the deposition of TaTm o…

FabricationMaterials scienceAnnealing (metallurgy)Perovskite solar cell02 engineering and technologyperovskite solar cell ; molybdenum oxide ; vacuum deposition ; processing ; hole transport layer010402 general chemistryhole transport layer01 natural sciencesmolybdenum oxidelcsh:ChemistryVacuum depositionWork functionOhmic contactMaterialsCèl·lules fotoelèctriquesOriginal Researchbusiness.industryGeneral Chemistryvacuum-deposition021001 nanoscience & nanotechnologyperovskite solar cell0104 chemical sciencesActive layerChemistrylcsh:QD1-999ElectrodeOptoelectronicsprocessing0210 nano-technologybusinessFrontiers in chemistry
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Preparation and Characterization of Mixed Halide MAPbI 3− x Cl x Perovskite Thin Films by Three‐Source Vacuum Deposition

2019

General EnergyMaterials scienceVacuum depositionAnalytical chemistryHalideThin filmScience technology and societyCharacterization (materials science)Perovskite (structure)Energy Technology
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Charge injection and trapping at perovskite interfaces with organic hole transporting materials of different ionization energies

2019

The extraction of photogenerated holes from CH3NH3PbI3 is crucial in perovskite solar cells. Understanding the main parameters that influence this process is essential to design materials and devices with improved efficiency. A series of vacuum deposited hole transporting materials (HTMs) of different ionization energies, used in efficient photovoltaic devices, are studied here by means of femtosecond transient absorption spectroscopy. We find that ultrafast charge injection from the perovskite into the different HTMs (<100 fs) competes with carrier thermalization and occurs independently of their ionization energy. Our results prove that injection takes place from hot states in the valence…

Materials science530 Physicslcsh:Biotechnology02 engineering and technologyElectronTrapping7. Clean energy01 natural sciencesVacuum depositionlcsh:TP248.13-248.65540 Chemistry0103 physical sciencesUltrafast laser spectroscopyGeneral Materials ScienceMaterialsPerovskite (structure)010302 applied physicsGeneral EngineeringCarrier lifetime021001 nanoscience & nanotechnologylcsh:QC1-999SemiconductorsChemical physicsFemtosecondIonization energy0210 nano-technologylcsh:PhysicsAPL Materials
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Thin film growth and band lineup of In2O3 on the layered semiconductor InSe

1999

Thin films of the transparent conducting oxide In2O3 have been prepared in ultrahigh vacuum by reactive evaporation of indium. X-ray diffraction, optical, and electrical measurements were used to characterize properties of films deposited on transparent insulating mica substrates under variation of the oxygen pressure. Photoelectron spectroscopy was used to investigate in situ the interface formation between In2O3 and the layered semiconductor InSe. For thick In2O3 films a work function of φ = 4.3 eV and a surface Fermi level position of EF−EV = 3.0 eV is determined, giving an ionization potential IP = 7.3 eV and an electron affinity χ = 3.7 eV. The interface exhibits a type I band alignmen…

Materials scienceAnalytical chemistryIonisation potentialGeneral Physics and AstronomyWork functionPhotoelectron spectrasymbols.namesakeX-ray photoelectron spectroscopyIndium compounds:FÍSICA [UNESCO]Electron affinityWork functionThin filmbusiness.industryFermi levelUNESCO::FÍSICAHeterojunctionInterface statesBand structureEvaporation (deposition)X-ray diffractionElectron affinitySemiconductorVacuum depositionIndium compounds ; Vacuum deposition ; X-ray diffraction ; Photoelectron spectra ; Semiconductor-insulator boundaries ; Work function ; Fermi level ; Ionisation potential ; Electron affinity ; Interface states ; Band structureFermi levelsymbolsSemiconductor-insulator boundariesOptoelectronicsbusiness
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Dual-source vacuum deposition of pure and mixed halide 2D perovskites: thin film characterization and processing guidelines

2020

The dual-source vacuum deposition of 2D perovskite films of the type PEA2PbX4, (PEA = phenethylammonium and X = I−, Br−, or a combination of both) is presented. Low-temperature deposited 2D perovskite films showed high crystallinity with the expected trend of bandgap as a function of halide type and concentration. Importantly, we observed an unavoidable halide cross-contamination among different deposition runs, as well as a strong dependence of the material quality on the type of halide precursors used. These findings should be taken into account in the development of vacuum processing for low-dimensional mixed halide perovskites.

Materials scienceBand gapAnalytical chemistryHalide02 engineering and technologyGeneral Chemistry010402 general chemistry021001 nanoscience & nanotechnology01 natural sciences0104 chemical sciencesCharacterization (materials science)CrystallinityVacuum depositionSemiconductorsMaterials ChemistryDeposition (phase transition)Thin film0210 nano-technologyMaterialsPerovskite (structure)
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Efficient Wide-Bandgap Mixed-Cation and Mixed-Halide Perovskite Solar Cells by Vacuum Deposition

2021

Vacuum deposition methods are increasingly applied to the preparation of perovskite films and devices, in view of the possibility to prepare multilayer structures at low temperature. Vacuum-deposited, wide-bandgap solar cells based on mixed-cation and mixed-anion perovskites have been scarcely reported, due to the challenges associated with the multiple-source processing of perovskite thin films. In this work, we describe a four-source vacuum deposition process to prepare wide-bandgap perovskites of the type FA1-n Cs n Pb(I1-x Br x )3 with a tunable bandgap and controlled morphology, using FAI, CsI, PbI2, and PbBr2 as the precursors. The simultaneous sublimation of PbI2 and PbBr2 allows the…

Materials scienceBand gapEnergy Engineering and Power TechnologyHalide02 engineering and technology010402 general chemistry01 natural sciences7. Clean energyVacuum depositionMaterials ChemistryThin filmCèl·lules fotoelèctriquesPerovskite (structure)Range (particle radiation)Renewable Energy Sustainability and the Environmentbusiness.industryConductivitat elèctrica021001 nanoscience & nanotechnology0104 chemical sciencesFuel TechnologyChemistry (miscellaneous)HomogeneousOptoelectronicsPhotovoltaics and Wind EnergySublimation (phase transition)0210 nano-technologybusinessACS Energy Letters
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Vacuum-Deposited Multication Tin-Lead Perovskite Solar Cells

2020

The use of a combination of tin and lead is the most promising approach to fabricate narrow bandgap metal halide perovskites. This work presents the development of reproducible tin and lead perovskites by vacuum co-deposition of the precursors, a solvent-free technique which can be easily implemented to form complex stacks. Crystallographic and optical characterization reveal the optimal film composition based on cesium and methylammonium monovalent cations. Device optimization makes use of the intrinsically additive nature of vacuum deposition, resulting in solar cells with 8.89% photovoltaic efficiency. The study of the devices by impedance spectroscopy identifies bulk recombination as on…

Materials scienceBand gapEnergy Engineering and Power TechnologyHalidechemistry.chemical_element02 engineering and technology010402 general chemistry01 natural sciences7. Clean energylaw.inventionVacuum depositionlawSolar cellMaterials ChemistryElectrochemistryChemical Engineering (miscellaneous)Electrical and Electronic EngineeringMaterialsCèl·lules fotoelèctriquesPerovskite (structure)business.industryPhotovoltaic system021001 nanoscience & nanotechnology0104 chemical sciencesDielectric spectroscopychemistryOptoelectronics0210 nano-technologybusinessTin
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